Author: Dai, J.H.
Paper Title Page
TUPB06 Design of Shanghai High Power THz -FEL Source 271
 
  • J.H. Dai, Z.M. Dai, H.X. Deng
    SINAP, Shanghai, People's Republic of China
 
  Funding: This work was supported by the CAS (29Y029011) and Shanghai NSF (09JC1416900).
An ERL-based THz source with kW average power is proposed in Shanghai, which will serve as an effective tool in material and biological sciences. In this paper, the physical design of two FEL oscillators, in the frequency range of 2~10THz and 0.5~2THz respectively, are given. In the design strategy, three dimensional, time-dependent numerical modelling of GENESIS and paraxial optical propagation code (OPC) are used. The performances of THz oscillator, the detuning effects and the influence of the THz radiation to the electron beam are presented.