TUOMMH04
Dreebit GmbH, Großröhrsdorf, Germany
Fraunhofer FEP, Dresden, Germany
DREEBIT GmbH, Dresden, Germany
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TUOMMH04 |
An ECR Ion Source with Integrated Sputter Magnetron for Metal Ion Beam Generation and Large Area Implantation | |
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| High current metal ion sources are utilized for surface irradiation and implantation in semiconductor, medical or optical industry as well as in photovoltaics. Therefore, a new ECR ion source (ECRIS) combined with an inverted cylindrical sputter magnetron device for metal atom load of the plasma has been developed to produce high currents of metal ion beams. For the generation of mA currents of metallic ion beams the particle load of the plasma should be in the order of 1018 particles per second. Double Langmuir probe and optical emission spectroscopy measurements are accomplished to determine the electron density in the plasma. The ion source is part of a new implantation platform which is suitable for the irradiation of a target width of 200 mm to produce homogeneous implantation profiles over the entire surface. This facility is including a dipole magnet to separate the produced metal ions from the process gas ions. Furthermore, an ion scan optic followed by an additional dipole magnet is developed to realize a pseudo broad beam scanning unit for large area implantation. In the presentation we describe the ion beam facility and report on first ion extraction experiments. | ||
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Slides TUOMMH04 [18.437 MB] | |