Paper |
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MOPG006 |
Characterization of Detectors for Beam Loss Measurements |
32 |
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- M. Panniello
MPI-K, Heidelberg, Germany
- P. Finocchiaro
INFN/LNS, Catania, Italy
- S. Mallows
CERN, Geneva, Switzerland
- A. Pappalardo
Microsensor S.R.L., Catania, Italy
- C.P. Welsch
Cockcroft Institute, Warrington, Cheshire, United Kingdom
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Silicon Photomultipliers (SiPMs) are a good candidate for use as beam loss detectors in an accelerator due to their insensitivity to magnetic fields, compactness and relatively low voltage working regime. Furthermore, when used in a great numbers, they are significantly cheaper to mass-produce than more conventional detectors, such as Ionization Chambers. To be able to evaluate the application potential of SiPMs in an accelerator , it is necessary to quantify their fundamental parameters as a particle detector, as well as in combination with an optical fiber used for signal generation. In this contribution an experimental and analytical study to determine the time resolution, light sensitivity and dynamic range of a Cherenkov light detector, based on SiPMs, is presented.
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Poster MOPG006 [2.550 MB]
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THBP02 |
Spectroscopic Characterization of Novel Silicon Photomultipliers |
267 |
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- M. Panniello
MPI-K, Heidelberg, Germany
- L.J. Devlin
The University of Liverpool, Liverpool, United Kingdom
- P. Finocchiaro, A. Pappalardo
INFN/LNS, Catania, Italy
- C.P. Welsch
Cockcroft Institute, Warrington, Cheshire, United Kingdom
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Most of the presently used systems for loss detection and EM radiation spectroscopy are still based on classical photomultiplier tubes. The more recent Silicon Photomultiplier (SiPM) is a good candidate to take their place thanks to some of its fundamental features such as the insensitivity to magnetic fields, robustness, compactness and relatively low voltage working regime. This device can be coupled to very different kinds of light generators, e.g. scintillators or Cherenkov radiators, thus making it extremely flexibile in its use. To evaluate the possible range of applications of a specific SiPM, it is necessary to quantify its fundamental parameters including noise, time resolution and dynamic range. In this contribution an experimental and analytical characterization of some last generation SiPMs is presented. Particular focus is given to a next-generation SiPM from ST Microelectronics.
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Slides THBP02 [7.838 MB]
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