Author: Finocchiaro, P.
Paper Title Page
MOPG006 Characterization of Detectors for Beam Loss Measurements 32
 
  • M. Panniello
    MPI-K, Heidelberg, Germany
  • P. Finocchiaro
    INFN/LNS, Catania, Italy
  • S. Mallows
    CERN, Geneva, Switzerland
  • A. Pappalardo
    Microsensor S.R.L., Catania, Italy
  • C.P. Welsch
    Cockcroft Institute, Warrington, Cheshire, United Kingdom
 
  Silicon Photomultipliers (SiPMs) are a good candidate for use as beam loss detectors in an accelerator due to their insensitivity to magnetic fields, compactness and relatively low voltage working regime. Furthermore, when used in a great numbers, they are significantly cheaper to mass-produce than more conventional detectors, such as Ionization Chambers. To be able to evaluate the application potential of SiPMs in an accelerator , it is necessary to quantify their fundamental parameters as a particle detector, as well as in combination with an optical fiber used for signal generation. In this contribution an experimental and analytical study to determine the time resolution, light sensitivity and dynamic range of a Cherenkov light detector, based on SiPMs, is presented.  
poster icon Poster MOPG006 [2.550 MB]  
 
THBP02 Spectroscopic Characterization of Novel Silicon Photomultipliers 267
 
  • M. Panniello
    MPI-K, Heidelberg, Germany
  • L.J. Devlin
    The University of Liverpool, Liverpool, United Kingdom
  • P. Finocchiaro, A. Pappalardo
    INFN/LNS, Catania, Italy
  • C.P. Welsch
    Cockcroft Institute, Warrington, Cheshire, United Kingdom
 
  Most of the presently used systems for loss detection and EM radiation spectroscopy are still based on classical photomultiplier tubes. The more recent Silicon Photomultiplier (SiPM) is a good candidate to take their place thanks to some of its fundamental features such as the insensitivity to magnetic fields, robustness, compactness and relatively low voltage working regime. This device can be coupled to very different kinds of light generators, e.g. scintillators or Cherenkov radiators, thus making it extremely flexibile in its use. To evaluate the possible range of applications of a specific SiPM, it is necessary to quantify its fundamental parameters including noise, time resolution and dynamic range. In this contribution an experimental and analytical characterization of some last generation SiPMs is presented. Particular focus is given to a next-generation SiPM from ST Microelectronics.  
slides icon Slides THBP02 [7.838 MB]