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- M. Panniello
MPI-K, Heidelberg, Germany
- L.J. Devlin
The University of Liverpool, Liverpool, United Kingdom
- P. Finocchiaro, A. Pappalardo
INFN/LNS, Catania, Italy
- C.P. Welsch
Cockcroft Institute, Warrington, Cheshire, United Kingdom
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Most of the presently used systems for loss detection and EM radiation spectroscopy are still based on classical photomultiplier tubes. The more recent Silicon Photomultiplier (SiPM) is a good candidate to take their place thanks to some of its fundamental features such as the insensitivity to magnetic fields, robustness, compactness and relatively low voltage working regime. This device can be coupled to very different kinds of light generators, e.g. scintillators or Cherenkov radiators, thus making it extremely flexibile in its use. To evaluate the possible range of applications of a specific SiPM, it is necessary to quantify its fundamental parameters including noise, time resolution and dynamic range. In this contribution an experimental and analytical characterization of some last generation SiPMs is presented. Particular focus is given to a next-generation SiPM from ST Microelectronics.
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