IPAC2017 - List of Authors (Tokuchi, A.)

Paper	Title	Page
WEPIK012	Performance of SuperKEKB High Energy Ring Beam Abort System	2939
	T. Mimashi, Y. Enomoto, N. Iida, M. Kikuchi, K. Kodama, T. Mori, Y. Suetsugu KEK, Ibaraki, Japan K. Abe Hitachi Power Semiconductor Device, Ltd., Hitachishi, Ibaraki, Japan K. Kise, A. Tokuchi Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan
	New Beam abort system was installed at the Super-KEKB High Energy Ring. It was designed to enlarge the horizontal beam size at the beam extraction window to protect the extraction window, and it also makes the beam abort gap shorter. It consists of four horizontal kicker magnets, one vertical kicker to sweep the beam position in vertical direction, sextupole magnet to enlarge the horizontal beam size, one lambertson magnet, Ti extraction window and beam dump. Four horizontal kicker magnets and one vertical kicker magnet connects to the one power supply. The ceramic chambers cooled by the water are inserted in each kicker coils. The Abort system had been used during SuperKEKB phase 1 operation. This paper describes the performance of the abort system.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-WEPIK012
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WEPVA063	Development of a New Pulsed Power Supply with the SiC-MOSFET	3412
	T. Takayanagi, K. Horino, J. Kamiya, M. Kinsho, T. Ueno, K. Yamamoto JAEA/J-PARC, Tokai-mura, Japan Y. Mushibe, A. Tokuchi Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan
	A new power supply has been developed using linear transformer driver (LTD) technology that adopts SiC-MOSFETs and capacitors without a thyratron switch or a pulse forming network (PFN) device. A new power supply was also designed by connecting the SiC-MOSFETs and the LTD modules in parallel-series. The output voltage and current were 40 kV and 4 kA, respectively with a pulse width of 1500 nsec at a repetition rate of 25 Hz. Furthermore, by adjusting the correction module, to an output voltage per stage of 1/1000, a resolution of the voltage correction of ±0.1 % could be achieved. It was possible to output the current with arbitrary timing by using a trigger input for each LTD module. As a result, fine adjustment of the output voltage waveform was possible within the order of nanoseconds. This new power supply with high voltage output, cur-rent output, and very fast pulse operation is one of the most important key technologies for a kicker system using SiC-MOSFETs. The design and preliminary test results of this prototype power supply are presented here.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-WEPVA063
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

Performance of SuperKEKB High Energy Ring Beam Abort System

2939

T. Mimashi, Y. Enomoto, N. Iida, M. Kikuchi, K. Kodama, T. Mori, Y. Suetsugu
KEK, Ibaraki, Japan
K. Abe
Hitachi Power Semiconductor Device, Ltd., Hitachishi, Ibaraki, Japan
K. Kise, A. Tokuchi
Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan

New Beam abort system was installed at the Super-KEKB High Energy Ring. It was designed to enlarge the horizontal beam size at the beam extraction window to protect the extraction window, and it also makes the beam abort gap shorter. It consists of four horizontal kicker magnets, one vertical kicker to sweep the beam position in vertical direction, sextupole magnet to enlarge the horizontal beam size, one lambertson magnet, Ti extraction window and beam dump. Four horizontal kicker magnets and one vertical kicker magnet connects to the one power supply. The ceramic chambers cooled by the water are inserted in each kicker coils. The Abort system had been used during SuperKEKB phase 1 operation. This paper describes the performance of the abort system.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-WEPIK012

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

WEPVA063

Development of a New Pulsed Power Supply with the SiC-MOSFET

3412

T. Takayanagi, K. Horino, J. Kamiya, M. Kinsho, T. Ueno, K. Yamamoto
JAEA/J-PARC, Tokai-mura, Japan
Y. Mushibe, A. Tokuchi
Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan

A new power supply has been developed using linear transformer driver (LTD) technology that adopts SiC-MOSFETs and capacitors without a thyratron switch or a pulse forming network (PFN) device. A new power supply was also designed by connecting the SiC-MOSFETs and the LTD modules in parallel-series. The output voltage and current were 40 kV and 4 kA, respectively with a pulse width of 1500 nsec at a repetition rate of 25 Hz. Furthermore, by adjusting the correction module, to an output voltage per stage of 1/1000, a resolution of the voltage correction of ±0.1 % could be achieved. It was possible to output the current with arbitrary timing by using a trigger input for each LTD module. As a result, fine adjustment of the output voltage waveform was possible within the order of nanoseconds. This new power supply with high voltage output, cur-rent output, and very fast pulse operation is one of the most important key technologies for a kicker system using SiC-MOSFETs. The design and preliminary test results of this prototype power supply are presented here.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-WEPVA063

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)