Author: Takayanagi, T.
Paper Title Page
MOPIK035 New Injection Scheme of J-PARC Rapid Cycling Synchrotron 579
 
  • K. Yamamoto, H. Harada, H. Hotchi, J. Kamiya, P.K. Saha, T. Takayanagi, M. Yoshimoto
    JAEA/J-PARC, Tokai-mura, Japan
  • N. Miki, O. Takeda
    Nippon Advanced Technology Co., Ltd., Tokai, Japan
 
  The 3-GeV Rapid Cycling Synchrotron (RCS) of Japan Proton Accelerator Research Complex (J-PARC) aims to deliver 1-MW proton beam to the neutron target and Main Ring synchrotron (MR). Present beam power of RCS is up to 500-kW and the higher radiation doses were concentrated in the injection area. These activations were caused by the interaction between the foil and the beam. To reduce the worker dose near the injection point, we have studied new design of the injection scheme to secure enough space for radiation shielding and bellows. In the new system, two of four injection pulse bump magnets are replaced and we are able to ensure the additional 500 mm space at the injection foil .  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-MOPIK035  
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WEPIK014 Coupled Bunch Instability and Its Cure at J-PARC RCS 2946
 
  • Y. Shobuda, H. Harada, H. Hotchi, P.K. Saha, T. Takayanagi, F. Tamura, N. Tani, T. Togashi, Y. Watanabe, K. Yamamoto, M. Yamamoto
    JAEA/J-PARC, Tokai-mura, Japan
  • Y.H. Chin, Y. Irie, T. Toyama
    KEK, Tokai, Ibaraki, Japan
 
  The RCS at J-PARC is a kicker-impedance dominant machine, which violates the impedance budget from a classical viewpoint. Nevertheless, we have recently succeeded to accelerate a 1-MW equivalent beam by making maximum use of the space charge effect on the beam instabilities. In this report, we explain the manipulation to suppress the beam instability, at first. Then, we discuss some issues to suppress the beam instabilities for beams with much smaller transverse emittance, as well as the present status of our efforts to reduce the kicker impedance toward the realization of the higher beam power at the RCS.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-WEPIK014  
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WEPVA063 Development of a New Pulsed Power Supply with the SiC-MOSFET 3412
 
  • T. Takayanagi, K. Horino, J. Kamiya, M. Kinsho, T. Ueno, K. Yamamoto
    JAEA/J-PARC, Tokai-mura, Japan
  • Y. Mushibe, A. Tokuchi
    Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan
 
  A new power supply has been developed using linear transformer driver (LTD) technology that adopts SiC-MOSFETs and capacitors without a thyratron switch or a pulse forming network (PFN) device. A new power supply was also designed by connecting the SiC-MOSFETs and the LTD modules in parallel-series. The output voltage and current were 40 kV and 4 kA, respectively with a pulse width of 1500 nsec at a repetition rate of 25 Hz. Furthermore, by adjusting the correction module, to an output voltage per stage of 1/1000, a resolution of the voltage correction of ±0.1 % could be achieved. It was possible to output the current with arbitrary timing by using a trigger input for each LTD module. As a result, fine adjustment of the output voltage waveform was possible within the order of nanoseconds. This new power supply with high voltage output, cur-rent output, and very fast pulse operation is one of the most important key technologies for a kicker system using SiC-MOSFETs. The design and preliminary test results of this prototype power supply are presented here.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-WEPVA063  
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