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| WEPCH189 |
Design of the 20 MeV User Facilities of Proton Engineering Frontier Project
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2376 |
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- K. R. Kim, Jae-Keun Kil. Kil, C.-Y. Lee, J.S. Lee, B.-S. Park
KAERI, Daejon
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The user facilities of PEFP (Proton Engineering Frontier Project) was designed. It is composed of two beamlines at the first stage and has possibility of expansion to five beamlines. One is low flux beamline for the technology developments in the fields of biological and space sciences and the other is high flux beamline for the utilization in the fields of nano and material sciences. The flux density is 1E+8~1E+10 protons/cm2-sec and 1E+10~1E+13 protons/cm2-sec each. The available energy range is 5~20MeV and the irradiation area is larger than 10cm in diameter with uniformity more than 90% for both. The specifications of these beamlines mentioned above were decided on the basis of result of user demand survey and operation experience of 45MeV proton beam test beamline installed at the MC-50 cyclotron of KIRAMS (Korea Institute of Radiological and Medical Science). The key components of these beamlines are bending magnets, magnetic quadrupole doublet or triplet, collimators, scanning magnets, target stage with water cooling system, degrader for energy control, scattering foils for flux control, etc. The beam optics was calculated using TRANSPORT and TRACE 3D simulation code.
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| WEPCH191 |
The Design and Manufacture of a 300 keV Heavy Ion Implanter for Surface Modification of Materials
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2382 |
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- J.S. Lee, Jae-Keun Kil. Kil, C.-Y. Lee
KAERI, Daejon
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A 300keV ion implanter has been designed for studies of surface modification of several materials by ion beam. The purpose of design is domestic development of the basic technology for the high energy ion implanter. The main point of design is production, acceleration and transportation of high nitrogen ion beam current up to 5mA and ion energy up to 300keV. 300keV ion implanter consists of Duo-PIGatron ion source, einzel lens, mass separation magnet, acceleration tube, magnetic quadrupole doublet, electrostatic scanner and target. Beam optics design carried out where space charge effect in the acceleration tube and second order aberrations in the mass separation magnet were considered. The mass numbers range from 1 to 140 and the resolving power M/ΔM is 131. Implanter control system includes fiber optics links for the monitoring and control of the ion source parameters in the high voltage zone and computer system for the characterization of the ion beam and whole control of an implantation process.
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