Paper | Title | Page |
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MOP047 | A 200 μm-period Laser-driven Undulator | 131 |
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Funding: This project was funded by U.S. Department of Energy under Contract No. DE-AC02-76SF00515 and the DARPA AXiS program. To reduce the linac energy required for a given synchrotron radiation wavelength, and hence the size of the device, a smaller undulator period with sufficient field strength is needed. In this work, a microfabricated, laser-driven undulator with 200um undulator period is proposed. A TE wave that co-propagates with the electron beam is excited between two polysilicon thin films, having a gap of 16.5um. The mode that is excited is a deflecting mode and causes the electron beam to wiggle. The device is fabricated on a silicon wafer, using conventional silicon micromachining techniques. A single polysilicon thin film is supported on a silicon chip, which has a slit from the back to allow delivery of the laser beam. Two such chips are bonded together to form a 16.5um gap, within which the electron beam passes through. The final device has dimensions 1cm x 1cm x 1.1mm and has approximately 35 undulator periods. In this paper, the model, design, fabrication, and cold measurements of the device are reported. |
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