NAPAC2019 - List of Authors (Salamo, G.J.)

Paper	Title	Page
MOPLH11	Nanostructured Photocathodes for Spin-Polarized Electron Beams	196
	E.J. Montgomery, C. Jing, S. Poddar Euclid Beamlabs LLC, Bolingbrook, USA A. Afanasev GWU, Washington, USA R. Kumar, G.J. Salamo University of Arkansas, Fayetteville, Arkansas, USA S. Zhang JLab, Newport News, Virginia, USA
	Funding: Work supported by US DOE Office of Science, Office of Nuclear Physics, SBIR grant DESC0019559. CNM work supported by US DOE Office of Science, Basic Energy Sciences, contract DE-AC02-06CH11357. We present progress on incorporation of nanopillar arrays into spin-polarized gallium arsenide photocathodes in pursuit of record high tolerance to ion back-bombardment. Our goal is to exceed the 400 Coulomb record for a high polarization milliampere-class electron source set at Jefferson Laboratory in 2017, while maintaining high quantum efficiency (QE) and spin polarization with a superlattice. Because the Mie effect is resonant, uniformity and careful control over nanostructure geometry is key. We report excellent uniformity and straight sidewall geometry with improved optical absorption using a painstakingly optimized inductively coupled plasma reactive ion etch. We also report the application of Kerker theory to spin-polarized photocathode nanopillar arrays, setting new requirements on nanostructure dimensions to avoid spoiling spin polarization. Finally, we also report initial steps toward re-establishing U.S. production of strained superlattice photocathodes towards integration with nanopillar arrays.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-NAPAC2019-MOPLH11
About •	paper received ※ 03 September 2019 paper accepted ※ 12 September 2019 issue date ※ 08 October 2019
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

Nanostructured Photocathodes for Spin-Polarized Electron Beams

196

E.J. Montgomery, C. Jing, S. Poddar
Euclid Beamlabs LLC, Bolingbrook, USA
A. Afanasev
GWU, Washington, USA
R. Kumar, G.J. Salamo
University of Arkansas, Fayetteville, Arkansas, USA
S. Zhang
JLab, Newport News, Virginia, USA

Funding: Work supported by US DOE Office of Science, Office of Nuclear Physics, SBIR grant DESC0019559. CNM work supported by US DOE Office of Science, Basic Energy Sciences, contract DE-AC02-06CH11357.
We present progress on incorporation of nanopillar arrays into spin-polarized gallium arsenide photocathodes in pursuit of record high tolerance to ion back-bombardment. Our goal is to exceed the 400 Coulomb record for a high polarization milliampere-class electron source set at Jefferson Laboratory in 2017, while maintaining high quantum efficiency (QE) and spin polarization with a superlattice. Because the Mie effect is resonant, uniformity and careful control over nanostructure geometry is key. We report excellent uniformity and straight sidewall geometry with improved optical absorption using a painstakingly optimized inductively coupled plasma reactive ion etch. We also report the application of Kerker theory to spin-polarized photocathode nanopillar arrays, setting new requirements on nanostructure dimensions to avoid spoiling spin polarization. Finally, we also report initial steps toward re-establishing U.S. production of strained superlattice photocathodes towards integration with nanopillar arrays.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-NAPAC2019-MOPLH11

About •

paper received ※ 03 September 2019 paper accepted ※ 12 September 2019 issue date ※ 08 October 2019

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)