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TY - CONF AU - Sun, Z. AU - Deng, X. AU - Liepe, M. AU - Maniscalco, J.T. AU - Oseroff, T.E. AU - Porter, R.D. AU - Zhang, D. ED - Yamazaki, Yoshishige ED - Raubenheimer, Tor ED - McCausey, Amy ED - Schaa, Volker RW TI - Fast Sn-Ion Transport on Nb Surface for Generating NbxSn Thin Films and XPS Depth Profiling J2 - Proc. of NAPAC2019, Lansing, MI, USA, 01-06 September 2019 CY - Lansing, MI, USA T2 - North American Particle Accelerator Conference T3 - 4 LA - english AB - In this work, we propose and demonstrate a fast and facile approach for NbxSn thin film deposition through the ion exchange reaction. By simply dipping a tin precursor on the Nb substrate surface, a ~600 nm thin film is generated due to the electronegativity differ-ence between Sn and Nb. Through X-ray photoelec-tron spectroscopy (XPS) depth profiling, the composi-tional information as a function of film thickness was obtained. Results showed a Sn layer on the film sur-face, Sn-rich and Nb-rich NbxSn layers as the majority of the film, and a ~60 nm Nb₃Sn layer at the film/substrate interface. Quantitative analysis con-firmed stoichiometric Nb/Sn ratio for the Nb₃Sn layer. This deposition method is demonstrated to be an alter-native choice for Nb₃Sn film growth. PB - JACoW Publishing CP - Geneva, Switzerland SP - 727 EP - 730 KW - interface KW - electron KW - cavity KW - radio-frequency KW - SRF DA - 2019/10 PY - 2019 SN - 2673-7000 SN - 978-3-95450-223-3 DO - doi:10.18429/JACoW-NAPAC2019-WEPLM60 UR - http://jacow.org/napac2019/papers/weplm60.pdf ER -