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BiBTeX citation export for WEPLM60: Fast Sn-Ion Transport on Nb Surface for Generating NbxSn Thin Films and XPS Depth Profiling

@InProceedings{sun:napac2019-weplm60,
  author       = {Z. Sun and X. Deng and M. Liepe and J.T. Maniscalco and T.E. Oseroff and R.D. Porter and D. Zhang},
% author       = {Z. Sun and X. Deng and M. Liepe and J.T. Maniscalco and T.E. Oseroff and R.D. Porter and others},
% author       = {Z. Sun and others},
  title        = {{Fast Sn-Ion Transport on Nb Surface for Generating NbxSn Thin Films and XPS Depth Profiling}},
  booktitle    = {Proc. NAPAC'19},
  pages        = {727--730},
  paper        = {WEPLM60},
  language     = {english},
  keywords     = {interface, electron, cavity, radio-frequency, SRF},
  venue        = {Lansing, MI, USA},
  series       = {North American Particle Accelerator Conference},
  number       = {4},
  publisher    = {JACoW Publishing, Geneva, Switzerland},
  month        = {10},
  year         = {2019},
  issn         = {2673-7000},
  isbn         = {978-3-95450-223-3},
  doi          = {10.18429/JACoW-NAPAC2019-WEPLM60},
  url          = {http://jacow.org/napac2019/papers/weplm60.pdf},
  note         = {https://doi.org/10.18429/JACoW-NAPAC2019-WEPLM60},
  abstract     = {In this work, we propose and demonstrate a fast and facile approach for NbxSn thin film deposition through the ion exchange reaction. By simply dipping a tin precursor on the Nb substrate surface, a ~600 nm thin film is generated due to the electronegativity differ-ence between Sn and Nb. Through X-ray photoelec-tron spectroscopy (XPS) depth profiling, the composi-tional information as a function of film thickness was obtained. Results showed a Sn layer on the film sur-face, Sn-rich and Nb-rich NbxSn layers as the majority of the film, and a ~60 nm Nb₃Sn layer at the film/substrate interface. Quantitative analysis con-firmed stoichiometric Nb/Sn ratio for the Nb₃Sn layer. This deposition method is demonstrated to be an alter-native choice for Nb₃Sn film growth.},
}