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@InProceedings{picard:napac2019-moplh13, author = {J.F. Picard and S.C. Schaub and R.J. Temkin}, title = {{STARRE Lab: The Sub-THz Accelerator Research Laboratory}}, booktitle = {Proc. NAPAC'19}, pages = {199--202}, paper = {MOPLH13}, language = {english}, keywords = {laser, electron, experiment, GUI, operation}, venue = {Lansing, MI, USA}, series = {North American Particle Accelerator Conference}, number = {4}, publisher = {JACoW Publishing, Geneva, Switzerland}, month = {10}, year = {2019}, issn = {2673-7000}, isbn = {978-3-95450-223-3}, doi = {10.18429/JACoW-NAPAC2019-MOPLH13}, url = {http://jacow.org/napac2019/papers/moplh13.pdf}, note = {https://doi.org/10.18429/JACoW-NAPAC2019-MOPLH13}, abstract = {This work presents the development of the STARRE Lab, a facility at MIT for testing breakdown in high gradient accelerator structures at 110 GHz. The system utilizes a Laser-Driven Semiconductor Switch (LDSS) to modulate the output of a megawatt gyrotron, which generates 3 μs pulses at up to 6 Hz. The LDSS employs silicon (Si) and gallium arsenide (GaAs) wafers to produce nanosecond-scale pulses at the megawatt level from the gyrotron output. Photoconductivity is induced in the wafers using a 532 nm Nd:YAG laser, which produces 6 ns, 230 mJ pulses. A single Si wafer produces 110 GHz RF pulses with 9 ns width, while under the same conditions, a single GaAs wafer produces 24 ns 110 GHz RF pulses. In dual-wafer operation, which uses two active wafers, pulses of variable length down to 3 ns duration can be created at power levels greater than 300 kW. The switch has been successfully tested at incident 110 GHz RF power levels up to 720 kW.* The facility has been used to successfully test an advanced 110 GHz accelerator structure built by SLAC to gradients in excess of 220 MV/m.}, }