IPAC2018 - List of Authors (Vogel, M.)

Paper	Title	Page
THPMK118	GaN Thin Film Photocathodes for High Brightness Electron Beams	4594
	M. Vogel, X. Jiang, M. Schumacher University Siegen, Siegen, Germany
	Funding: This work was supported by the German Federal Ministry of Education and Research under grant 05K16PS1 "HOPE II: Hochbrillante photoinduzierte Hochfrequenz-Elektronenquellen". Gallium nitride (GaN) is one promising candidate as photocathode material showing high quantum efficiencies which is one of the requirements for high brightness electron beams. In addition to reported quantum efficiencies of up to 70%, GaN needs to satisfy the demands for long lifetime, low dark current and low thermal emittance. In this contribution, the ongoing activities of the synthesis by means of reactive rf magnetron sputtering and characterization of GaN is presented. The latter is done by standard materials science methods and in-situ measurements of the quantum efficiency in combination with lifetime and dark current measurements to asses and optimize the photocathode's performance. Along with the project's details, first experimental results of GaN thin films synthesized utilizing a GaAs source are presented.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-THPMK118
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Paper

Title

Page

GaN Thin Film Photocathodes for High Brightness Electron Beams

4594

M. Vogel, X. Jiang, M. Schumacher
University Siegen, Siegen, Germany

Funding: This work was supported by the German Federal Ministry of Education and Research under grant 05K16PS1 "HOPE II: Hochbrillante photoinduzierte Hochfrequenz-Elektronenquellen".
Gallium nitride (GaN) is one promising candidate as photocathode material showing high quantum efficiencies which is one of the requirements for high brightness electron beams. In addition to reported quantum efficiencies of up to 70%, GaN needs to satisfy the demands for long lifetime, low dark current and low thermal emittance. In this contribution, the ongoing activities of the synthesis by means of reactive rf magnetron sputtering and characterization of GaN is presented. The latter is done by standard materials science methods and in-situ measurements of the quantum efficiency in combination with lifetime and dark current measurements to asses and optimize the photocathode's performance. Along with the project's details, first experimental results of GaN thin films synthesized utilizing a GaAs source are presented.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-THPMK118

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)