IPAC2018 - List of Authors (Palacios Serrano, G.G.)

Paper	Title	Page
THPMK110	300 kV DC High Voltage Photogun with Inverted Insulator Geometry and CsK2sb Photocathode	4571
SUSPF028	use link to see paper's listing under its alternate paper code
	Y.W. Wang, P.A. Adderley, J. F. Benesch, D.B. Bullard, J.M. Grames, F.E. Hannon, J. Hansknecht, C. Hernandez-Garcia, R. Kazimi, G.A. Krafft, G.A. Krafft, M.A. Mamun, G.G. Palacios Serrano, M. Poelker, R. Suleiman, M.G. Tiefenback, S. Zhang JLab, Newport News, Virginia, USA G.A. Krafft, S.A.K. Wijethunga ODU, Norfolk, Virginia, USA
	Funding: This work is supported by the Department of Energy, Laboratory Directed Research and Development funding, under contract DE-AC05-06OR23177 A compact DC high voltage photogun with inverted-insulator geometry was designed, built and operated reliably at 300 kV bias voltage using alkali-antimonide photocathodes. This presentation describes key electrostatic design features of the photogun with accompanying emittance measurements obtained across the entire photocathode surface that speak to field non-uniformity within the cathode/anode gap. A summary of initial photocathode lifetime measurements at beam currents up to 4.5 mA is also presented.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-THPMK110
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Paper

Title

Page

THPMK110

300 kV DC High Voltage Photogun with Inverted Insulator Geometry and CsK2sb Photocathode

4571

SUSPF028

use link to see paper's listing under its alternate paper code

Y.W. Wang, P.A. Adderley, J. F. Benesch, D.B. Bullard, J.M. Grames, F.E. Hannon, J. Hansknecht, C. Hernandez-Garcia, R. Kazimi, G.A. Krafft, G.A. Krafft, M.A. Mamun, G.G. Palacios Serrano, M. Poelker, R. Suleiman, M.G. Tiefenback, S. Zhang
JLab, Newport News, Virginia, USA
G.A. Krafft, S.A.K. Wijethunga
ODU, Norfolk, Virginia, USA

Funding: This work is supported by the Department of Energy, Laboratory Directed Research and Development funding, under contract DE-AC05-06OR23177
A compact DC high voltage photogun with inverted-insulator geometry was designed, built and operated reliably at 300 kV bias voltage using alkali-antimonide photocathodes. This presentation describes key electrostatic design features of the photogun with accompanying emittance measurements obtained across the entire photocathode surface that speak to field non-uniformity within the cathode/anode gap. A summary of initial photocathode lifetime measurements at beam currents up to 4.5 mA is also presented.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-THPMK110

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)