IPAC2018 - List of Authors (Kovi, K.)

Paper	Title	Page
TUPML061	Study of Mean Transverse Energy of (N)UNCD with Tunable Laser Source	1677
SUSPF050	use link to see paper's listing under its alternate paper code
	G. Chen IIT, Chicago, Illinois, USA G. Adhikari, W.A. Schroeder UIC, Chicago, Illinois, USA S.P. Antipov, C.-J. Jing, K. Kovi Euclid TechLabs, LLC, Solon, Ohio, USA S.V. Baryshev ANL, Argonne, Illinois, USA L.K. Spentzouris Illinois Institute of Technology, Chicago, Illinois, USA
	Funding: NSF grant No. NSF-1739150, DOE SBIR program grant No. DE-SC0013145, NSF grant No. PHYS-1535279, DOE Contract No. DE-AC02-06CH11357. There is a strong motivation to develop and understand novel materials with the potential to be utilized as photocathodes, as these could have desirable photoemission properties for research and industrial applications. Nitrogen-incorporated ultrananocrystalline diamond ((N)UNCD) photocathodes have potential to become a material of choice for photocathode applications. (N)UNCD has high quantum efficiency when processed in hydrogen plasma, low surface roughness, and high electron conductivity through the bulk*. The mean transverse energy (MTE) was calculated for (N)UNCD thin films using the double-solenoid scan method. (N)UNCD thin film with thickness of 160nm was deposited on highly-doped silicon substrate. Studies of the MTE of a (N)UNCD sample were done using a tunable laser source with photon energies of 3.56 eV to 5.26 eV. These results are presented. K.J. Pérez Quintero et al., Appl. Phys. Lett. 105, 123103 (2014). ** S. Bhattacharyya et al., Appl. Phys. Lett. 79, 1441 (2001)
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-TUPML061
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

TUPML061

Study of Mean Transverse Energy of (N)UNCD with Tunable Laser Source

1677

SUSPF050

use link to see paper's listing under its alternate paper code

G. Chen
IIT, Chicago, Illinois, USA
G. Adhikari, W.A. Schroeder
UIC, Chicago, Illinois, USA
S.P. Antipov, C.-J. Jing, K. Kovi
Euclid TechLabs, LLC, Solon, Ohio, USA
S.V. Baryshev
ANL, Argonne, Illinois, USA
L.K. Spentzouris
Illinois Institute of Technology, Chicago, Illinois, USA

Funding: NSF grant No. NSF-1739150, DOE SBIR program grant No. DE-SC0013145, NSF grant No. PHYS-1535279, DOE Contract No. DE-AC02-06CH11357.
There is a strong motivation to develop and understand novel materials with the potential to be utilized as photocathodes, as these could have desirable photoemission properties for research and industrial applications. Nitrogen-incorporated ultrananocrystalline diamond ((N)UNCD) photocathodes have potential to become a material of choice for photocathode applications*. (N)UNCD has high quantum efficiency when processed in hydrogen plasma*, low surface roughness, and high electron conductivity through the bulk**. The mean transverse energy (MTE) was calculated for (N)UNCD thin films using the double-solenoid scan method. (N)UNCD thin film with thickness of 160nm was deposited on highly-doped silicon substrate. Studies of the MTE of a (N)UNCD sample were done using a tunable laser source with photon energies of 3.56 eV to 5.26 eV. These results are presented.
* K.J. Pérez Quintero et al., Appl. Phys. Lett. 105, 123103 (2014).
** S. Bhattacharyya et al., Appl. Phys. Lett. 79, 1441 (2001)

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-TUPML061

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)