IPAC2018 - List of Authors (Horino, K.)

Paper	Title	Page
THPAL082	Development of a New Modular Switch Using a Next-Generation Semiconductor	3841
	T. Takayanagi, K. Horino, T. Ueno JAEA/J-PARC, Tokai-mura, Japan
	An ultra-high-speed short pulse switch for high power have been developed by using SIC - MOSFET which is one of next generation semiconductors. Semiconductor switches using SIC-MOSFETs are expected to replace the thyratron, and they are composed of circuits in which many semiconductor switches are multiplexed in series and parallel for high power. Semiconductor switches using SIC-MOSFETs are expected to replace the thyratron, and they are also designed by connecting many semiconductor switches in parallel-series. To realize a low switching noise, it is common to form a symmetrical circuit. However, as the number of parallel connections increases, the circuit length between input and output becomes longer, so the output waveform is distorted due to any timing jitter or level fluctuation. Therefore, we propose a radially symmetric type of a module switch which does not cause level fluctuation due to the timing jitter by equalizing the circuit length independently of the number of semiconductor switches. The design and preliminary test results of two types of switch circuits, radially symmetric type and line symmetric type are presented here.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-THPAL082
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Paper

Title

Page

Development of a New Modular Switch Using a Next-Generation Semiconductor

3841

T. Takayanagi, K. Horino, T. Ueno
JAEA/J-PARC, Tokai-mura, Japan

An ultra-high-speed short pulse switch for high power have been developed by using SIC - MOSFET which is one of next generation semiconductors. Semiconductor switches using SIC-MOSFETs are expected to replace the thyratron, and they are composed of circuits in which many semiconductor switches are multiplexed in series and parallel for high power. Semiconductor switches using SIC-MOSFETs are expected to replace the thyratron, and they are also designed by connecting many semiconductor switches in parallel-series. To realize a low switching noise, it is common to form a symmetrical circuit. However, as the number of parallel connections increases, the circuit length between input and output becomes longer, so the output waveform is distorted due to any timing jitter or level fluctuation. Therefore, we propose a radially symmetric type of a module switch which does not cause level fluctuation due to the timing jitter by equalizing the circuit length independently of the number of semiconductor switches. The design and preliminary test results of two types of switch circuits, radially symmetric type and line symmetric type are presented here.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-THPAL082

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)