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@unpublished{yadav:ibic2020-wepp23,
author = {R. Yadav and A. Penirschke and S. Preu and S. Regensburger},
title = {{Optimization of GaAs Based Field Effect Transistors for THz Detection at Particle Accelerators}},
booktitle = {Proc. IBIC'20},
language = {english},
intype = {presented at the},
series = {International Beam Instrumentation Conference},
number = {9},
venue = {Santos, Brazil},
publisher = {JACoW Publishing, Geneva, Switzerland},
month = {oct},
year = {2020},
note = {presented at IBIC2020 in Santos, Brazil, unpublished},
abstract = {For pump probe experiments employing a free-electron laser and a near infrared (NIR) laser, there is no natural locking between the two. Therefore only the repetition rate of the two lasers can be synchronized leading to jitter and drift on the picosecond scale. GaAs-based field-effect transistors (FETs) allow for simultaneous detection of the amplitude and timing of picosecond-scale THz and NIR pulses*. They cover the whole THz band and beyond up to the MIR (0.1 - 22 THz) with the exception of the GaAs Reststrahlen band*. Large-area FETs feature a high damage threshold (>65 kW) and large linearity range*. Antenna-coupled FETs show a noise equivalent power (NEP) of 250 pW/√Hz at 600 GHz**. FET based THz detectors can be used both for THz beam on a single pulse level, as well as for the beam diagnosis. For further optimization of the detector for the needs of beam diagnosis with low incident intensity, a more precise modeling of the FET is developed. Therefore, the incoupling of THz to the rectifying element is investigated. The S-Parameters of the 2DEG are measured with on-wafer probes up to 67 GHz and de-embedded with on-wafer TRL*** calibration.},
}