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TY - UNPB AU - Cultrera, L. AU - Bae, J. AU - Bazarov, I.V. AU - Galdi, A. AU - Ikponmwen, F. AU - Maxson, J.M. ED - Meseck, Atoosa ED - McAteer, Meghan ED - Schaa, Volker R.W. ED - V\xF6lker, Jens TI - High Current Polarized Electron Source Development J2 - Proc. of ERL2019, Berlin, Germany, 15-20 September 2019 CY - Berlin, Germany T2 - ICFA Advanced Beam Dynamics Workshop on Energy Recovery Linacs T3 - 63 LA - english AB - We report on negative electron affinity (NEA) of GaAs using robust layers based on the use of Cs, Sb and Oxygen. A detailed parametric study has been performed on the growth conditions and using the equivalent Sb thickness as main parameter. Our results confirm that dark lifetime (measured as 1/e decay of the quantum efficiency as function of time) of the GaAs activated using this method is improved by a factor 10. More importantly the operating lifetime (measured as 1/e decay of the quantum efficiency as function of the extracted charge) is improved by a factor 40 with respect to Cs-O activated GaAs operated under similar conditions. Such improvements on the lifetime are achieved at expenses of a slightly reduced QE and electron spin polarization. PB - JACoW Publishing CP - Geneva, Switzerland ER -